NANOTECHNOLOGY FOR PHOTOSENSITIVE STRUCTURE METALL-DIELECTRIC (OXIDE)-SEMICONDUCTOR

Разное

Photosensitive MIS nanostructures Au-Ga2O3(Fe)-n-GaP were made by chemical deposition method. Photoelectric and electric properties of this structures were researched. The oxide layer Ga2O3(Fe) morphology and structure were investigated on transmission and atomic-force electron microscopes. New regularity were discovered in visible (2-3 eV) and ultraviolet (UV) (5-6.2 eV) spectral regions. A spectral maximum was observed in long-wave spectral region (hνm = 2.35 eV). This accounts for iron nanooxide formation on the interface semiconductor-dielectric with energy gap width Eg ≈ 2.2 eV (300 K). In UV region at hν > 5.1 eV huge photosensitivity was discovered, this accounts for avalanche multiplication in a space-charge layer and properties of nanolayers of the metal Au and of the high energy-gap oxide Ga2O3(Fe). In a oxide layer nanowires with iron oxide were discovered, 25-45 nm in diameter and it's length was 10-12 μm. Typical value of structure current photosensitivity nearly hν = 6.0 eV achieves ~0.25 A/W under zero voltage bias. There's demonstrate that short-wave UV radiation is strongly absorbed in nanowires. This effects in photosensitive MIS nanostructures give an opportunity the new types of UV radiation photodetectors for practical application.

Мелебаев Даулбай

12 декабря 2023

177

Содержимое публикации

NANOTECHNOLOGY FOR PHOTOSENSITIVE

STRUCTURE METALL-DIELECTRIC (OXIDE)-SEMICONDUCTOR

D.Melebayev

Sun Energy Institute of Academy of Science of Turkmenistan

dmelebay@yandex.ru

Photosensitive MIS nanostructures Au-Ga₂O₃(Fe)-n-GaP were made by chemical deposition method. Photoelectric and electric properties of this structures were researched. The oxide layer Ga₂O₃(Fe) morphology and structure were investigated on transmission and atomic-force electron microscopes. New regularity were discovered in visible (2-3 eV) and ultraviolet (UV) (5-6.2 eV) spectral regions. A spectral maximum was observed in long-wave spectral region (hν_m = 2.35 eV). This accounts for iron nanooxide formation on the interface semiconductor-dielectric with energy gap width E_g≈ 2.2 eV (300 K). In UV region at hν > 5.1 eV huge photosensitivity was discovered, this accounts for avalanche multiplication in a space-charge layer and properties of nanolayers of the metal Au and of the high energy-gap oxide Ga₂O₃(Fe). In a oxide layer nanowires with iron oxide were discovered, 25-45 nm in diameter and it's length was 10-12 μm. Typical value of structure current photosensitivity nearly hν = 6.0 eV achieves ~0.25 A/W under zero voltage bias. There's demonstrate that short-wave UV radiation is strongly absorbed in nanowires. This effects in photosensitive MIS nanostructures give an opportunity the new types of UV radiation photodetectors for practical application.