GIANT PHOTOSENSITIVITY OF Au-Ga2O3(Fe)-n-GaP NANOSTRUCTURE IN ULTRAVIOLET SPECTRAL REGION

Разное

Photosensitive MIS nanostructures Au-Ga2O3(Fe)-n-GaP were made by chemical deposition method. Photoelectric properties of this structures were researched. The oxide layer Ga2O3(Fe) morphology and structure were investigated on scanning and transmission electron microscopes. New regularities were discovered in visible (2-3 eV) and ultraviolet (5-6.2 eV) spectral regions. In long-wavelength part maximum is observed at hνm=2.35 eV. This is due to the fact that ferric nanooxide (Fe2O3) (Еg≈2.3 eV (300 К)) forms on semiconductor-dielectric interface. Giant photosensitivity was discovered in ultraviolet spectral region (hν>5.1 eV). This is because avalanche multiplication originates in the space-charge layer and properties of nanolayers Au and wide-band gap oxide Ga2O3(Fe). In the oxide layer nanowires with ferric oxide were discovered. Theirs diameter is 25-45 nm and length is 10-12 micron. Short-wave ultraviolet radiation is strong absorbed in nanowires. This effects in photosensitive MIS nanostructures give an opportunity create new photoelectric devices.

Мелебаев Даулбай

12 декабря 2023

119

Содержимое публикации

GIANT PHOTOSENSITIVITY OF Au-Ga₂O₃(Fe)-n-GaP NANOSTRUCTURE

IN ULTRAVIOLET SPECTRAL REGION

Melebayev D.

Physico-mathematical institute of Turkmenistan Academy of science, Ashgabat.

Photosensitive MIS nanostructures Au-Ga₂O₃(Fe)-n-GaP were made by chemical deposition method. Photoelectric properties of this structures were researched. The oxide layer Ga₂O₃(Fe) morphology and structure were investigated on scanning and transmission electron microscopes. New regularities were discovered in visible (2-3 eV) and ultraviolet (5-6.2 eV) spectral regions. In long-wavelength part maximum is observed at hν_m=2.35 eV. This is due to the fact that ferric nanooxide (Fe₂O₃) (Е_g≈2.3 eV (300 К)) forms on semiconductor-dielectric interface. Giant photosensitivity was discovered in ultraviolet spectral region (hν>5.1 eV). This is because avalanche multiplication originates in the space-charge layer and properties of nanolayers Au and wide-band gap oxide Ga₂O₃(Fe). In the oxide layer nanowires with ferric oxide were discovered. Theirs diameter is 25-45 nm and length is 10-12 micron. Short-wave ultraviolet radiation is strong absorbed in nanowires. This effects in photosensitive MIS nanostructures give an opportunity create new photoelectric devices.